PART |
Description |
Maker |
IDW30G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
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KIA78R000F/PI KIA78R050F/PI KIA78R015F/PI KIA78R01 |
BIPOLAR LINEAR INTEGRATED CIRCUIT 5 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, SFM4 SEMICONDUCTOR SEMICONDUCTOR TECHNICAL DATA
|
KEC(Korea Electronics)
|
GVT72512A8 |
REVOLUTIONARY PINOUT 512K X 8
|
Galvantech
|
GVT73256A16 |
REVOLUTIONARY PINOUT 256K X 16
|
Galvantech
|
SPW11N80C3 SPW11N80C3-11 |
New revolutionary high voltage technology
|
Infineon Technologies A...
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GVT73512A8 73512A8S |
REVOLUTIONARY PINOUT 512K X 8 From old datasheet system
|
Galvantech
|
AS5C512K8ECJ-35/H AS5C512K8ECJ-17L/H AS5C512K8ECJ- |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT 12k × 8的SRAM高速SRAM和革命引脚排 LED, GRN SMT, 1206 µP-Compatible 14-Bit CMOS DAC; Package: PLCC; No of Pins: 20; Temperature Range: Commercial Circular Connector; No. of Contacts:37; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Pin; Circular Shell Style:Right Angle Plug; Insert Arrangement:28-21 RoHS Compliant: No CAT5 STP BACKBONE CABLE STRAIGHT PIN, PLN-GRAY 512K x 8 SRAM - high speed with revolutionary pinout
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Electronic Theatre Controls, Inc. Austin Semiconductor http://
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IS63LV102407 IS63LV1024L-10JLI IS63LV1024L-10T IS6 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
|
Integrated Silicon Solution, Inc
|
SPB11N60S5 SPB11N60S505 |
New revolutionary high voltage technology Ultra low gate charge
|
http://
|
SPB17N80C3 SPB17N80C307 |
CoolMOS庐 Power Transistor Features new revolutionary high voltage technology
|
Infineon Technologies AG
|
IDT71V124S20 IDT71V124S15 IDT71V124S20YI IDT71V124 |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout
|
Integrated Device Techn... IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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SPI11N60S5 SPP11N60S5 SPP11N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|